Publication date: April 2019
Source: Renewable Energy, Volume 133
Author(s): Quntao Tang, Honglie Shen, Hanyu Yao, Kai Gao, Ye Jiang, Yufang Li, Youwen Liu, Lei Zhang, Zhichun Ni, Qingzhu Wei
In this work, random inverted nanopyramids (INPs) are fabricated as light trapping structures on ultrathin c-Si through a simple and cost-effective wet chemical method, followed by a systematic investigation of the photo-capturing properties of INPs combining experiments and simulations. In comprehensive consideration of thickness loss and light trapping performance, random INPs are applied onto 45 μm ultrathin c-Si solar cell and a high short-current density (Jsc) (36.6 mA/cm2) and energy-conversion efficiency (17.0%) are achieved, which are 0.3 mA/cm2 and 0.13% respectively higher than that in micro pyramid textured one, and our electrical simulation also demonstrates that the advantages of INPs are more obvious on thinner c-Si compared with conventional micro pyramids. Finally, through electrical simulation, INPs textured 45 μm c-Si solar cell is expected to have a large improvement room for efficiency by controlling the front and rear surface recombination velocity. All the findings not only offer additional insight into the light-trapping mechanism in the random INPs but also provide controllable and efficient broadband light harvesters for next-generation cost effective flexible photovoltaics.